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. 2023 Oct 18;16(20):6750.
doi: 10.3390/ma16206750.

Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures

Aleksey N Klochkov  1 , Almas Yskakov  2   3   4 , Aleksander N Vinichenko  1 , Danil A Safonov  1 , Nikolay I Kargin  1 , Maksim V Bulavin  2 , Aleksey V Galushko  2 , Vladik R Yamurzin  2 , Ivan S Vasil'evskii  1
Affiliations

Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures

Aleksey N Klochkov et al. Materials (Basel). .

Abstract

The effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions were subjected to neutron irradiation in the reactor channel with the fluence range of 2 × 1014 cm-2 ÷ 1.2 × 1016 cm-2. The low-temperature photoluminescence spectra, electron concentration and mobility, and high-resolution X-ray diffraction curves were measured after the deactivation. The paper discusses the effect of neutron dose on the conductivity and optical spectra of structures based on InGaAs quantum wells depending on the doping level. The limiting dose of neutron irradiation was also estimated for the successful utilization of AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs heterostructures in electronic applications.

Keywords: InGaAs; electron concentration; high resolution X-ray diffraction; mobility; neutron irradiation; photoluminescence; two-dimensional electron gas.

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Conflict of interest statement

The authors declare no conflict of interest. The funders had no role in the design of the study, in the collection, analyses, or interpretation of the data; in the writing of the manuscript; or in the decision to publish the results.

Figures

Figure 1
Figure 1
Layer structure of samples with Al0.25Ga0.75As/In0.21Ga0.79As/GaAs quantum well and one-sided δ-doping.
Figure 2
Figure 2
Photo of a holder cassette with several heterostructures.
Figure 3
Figure 3
Dependence of the sheet electron concentration in InGaAs-based quantum wells on neutron fluence.
Figure 4
Figure 4
PL spectra at 77 K of heterostructures with double-side doped Al0.25Ga0.75As/In0.21Ga0.79As/Al0.25Ga0.75As QWs (sample 328) after exposure to various neutron fluences.
Figure 5
Figure 5
PL spectra at 77 K of single-sided doped heterostructures with Al0.25Ga0.75As/In0.21Ga0.79As/GaAs QWs after exposure to various neutron fluences: (a) sample 485; (b) sample 468; and (c) sample 435.
Figure 6
Figure 6
PL intensity suppression of QW optical transition depending on the neutron fluence.
Figure 7
Figure 7
Diffraction reflection curves in 2θ-ω geometry for a heterostructure with Al0.25Ga0.75As/In0.21Ga0.79As/GaAs QW before and after irradiation with three doses of neutrons (plots are shifted vertically for clarity): (a) symmetrical reflection from planes (004), (b) asymmetric reflection (422) for a grazing incident beam.
See this image and copyright information in PMC

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