Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Abstract

This article provides a comprehensive review of wide and ultrawide bandgap power electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the emerging device diamond technology. Key parameters examined include bandgap, critical electric field, electron mobility, voltage/current ratings, switching frequency, and device packaging. The historical evolution of each material is traced from early research devices to current commercial offerings. Significant focus is given to SiC and GaN as they are now actively competing with Si devices in the market, enabled by their higher bandgaps. The paper details advancements in material growth, device architectures, reliability, and manufacturing that have allowed SiC and GaN adoption in electric vehicles, renewable energy, aerospace, and other applications requiring high power density, efficiency, and frequency operation. Performance enhancements over Si are quantified. However, the challenges associated with the advancements of these devices are also elaborately described: material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference. Alongside the cost reduction through improved manufacturing, material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference are critical hurdles of this technology. The review analyzes these issues and emerging solutions using advanced packaging, circuit integration, novel cooling techniques, and modeling. Overall, the manuscript provides a timely, rigorous examination of the state of the art in wide bandgap power semiconductors. It balances theoretical potential and practical limitations while assessing commercial readiness and mapping trajectories for further innovation. This article will benefit researchers and professionals advancing power electronic systems.

Keywords: GaN; diamond; power semiconductor devices; silicon; silicon carbide; ultrawide bandgap devices; wide bandgap devices.

Figure 1

Summary of Si’s, SiC’s, and GaN’s relevant material properties [1].

Figure 2

Side view of SiC lattice [54].

Figure 3

SiC diodes’ turn-off current waveforms at 25 °C inductive load [73].

Figure 4

Calculated converter efficiency for a 1200-V SiC MOSFET system versus that based on an IGBT/SiC diode hybrid power module [83].

Figure 5

Comparison of a Si IGBT vs. SiC MOSFET system control of a robot arm [84].

Figure 6

Evaluation of wideband power semiconductor modules designed and manufactured by GE Aerospace [115,116,117].

Figure 7

SiC power module packaging structure.

Figure 8

GaN technology to significantly reduce carbon emissions and energy consumption [138].

Figure 9

Device structure of cascade GaN HEMT.

Figure 10

2021–2027 power GaN device market projected revenue [176].

Figure 11

GaN technology in various power sectors [138].

Figure 12

The thermal expansion coefficient of GaN and common substrates as a function of lattice constant.

Figure 13

Current collapse effect.

Figure 14

Challenges associated with electrical isolation for GaN devices.

Figure 15

GaN E-HEMT gate driver.

Figure 16

Threshold voltage shift V_th with relation to stress time at various temperatures [204].

Figure 17

Schematic of configurations for normally on AlGaN/GaN HEMTs with (a) Schottky gate; and (b) and insulated gate [17].

Figure 18

Diamond’s hydrogen termination decreases its ionization energy and promotes electron transfer from the surface’s valence band into other materials that adsorb the electrons [212].

Figure 19

Critical material properties of Si, 4H-SiC, and Wurtzite GaN [214].

Figure 20

State-of-the-art commercial Si power devices in terms of the upper boundary of the voltage and current ratings achieved in a single-packaged device. The current rating shown is the DC rating at a case temperature of 85 °C.

Figure 21

State-of-the-art commercial WBG power devices in terms of the upper boundary of the voltage and current ratings achieved in a single-packaged device. The current rating shown is the DC rating at a case temperature of 25 °C.

Figure 22

Flow of the characteristics of WBG semiconductor devices in terms of the parameter capabilities (blue); physical properties affected by WBG advantages (red); power electronics characteristics (green); and product benefits (yellow).

Figure 23

Power electronic market size projection: Will surpass USD 94.21 Billion revenue by 2032.