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. 2024 Jan 5:216:118586.
doi: 10.1016/j.carbon.2023.118586. Epub 2023 Nov 1.

A Perovskite-Graphene Device for X-ray Detection

J Snow  1 , C Olson  1 , E Torres  2 , K Shirley  3 , E Cazalas  1
Affiliations

A Perovskite-Graphene Device for X-ray Detection

J Snow et al. Carbon N Y. .

Abstract

This study examines a perovskite-based graphene field effect transistor (P-GFET) device for X-ray detection. The device architecture consisted of a commercially available GFET-S20 chip, produced by Graphenea, with a layer of methylammonium lead iodide (MAPbI3) perovskite spin coated onto the top of it. This device was exposed to the field of a molybdenum target X-ray tube with beam settings between 20-60 kVp (X-ray tube voltage) and 30-300 uA (X-ray tube current). Dose measurements were taken with an ion-chamber and thermo-luminescent dosimeters and used to determine the sensitivity of the device as a function of the X-ray tube voltage and current, as well as source-drain voltage. The X-ray tube was also simulated in this work with GEANT4 and MCNP to determine the dose rate and power incident on the device during irradiation. These simulations were then used to determine the responsivity as a function of the X-ray tube voltage and current, as well as the source-drain voltage. Overall, a strong positive correlation between sensitivity and source-drain voltage was found. Conversely, the sensitivity was found to decrease - roughly exponentially - as a function of both the X-ray tube current and energy. Similar trends were seen with responsivity. We report the models used for the study as well as address the feasibility of the device as a low-energy (< 70 keV) X-ray photon detector.

Keywords: GFET; Graphene; X-ray; perovskite; radiation detection.

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Conflict of interest statement

Declaration of interests The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Figures

Fig. 1.
Fig. 1.
(a) Schematic of GFET-S20 device. Orange represents exposed gold contacts. Purple represents encapsulated gold leading to the graphene channel. Each device contains 12 GFETs, 6 on the bottom and 6 on the top. (b) Image of final perovskite-GFET device with probes attached to the source and drain contacts of the transistor chosen for testing. The source probe is contacting the top-middle right pad, and the drain probe is contacting the far-right top pad.
Fig. 2.
Fig. 2.
Diagram of experimental setup (not to scale). The X-ray source aperture is approximately 7 cm away from the device and at 30° from the horizontal. A vertical cross section of the device is magnified to illustrate the geometry of the device. The light gray line in between the gold contacts, graphene, and perovskite indicates the Al203 passivation layer, which is 50 nm thick. The silicon dioxide layer is 90 μm thick. The perovskite layer is <10 μm thick. The graphene channel is 100 μm in length.
Fig. 3.
Fig. 3.
Charge transfer curve between source and gate from −40 V and 40 V. This curve was measured with a graphene source-drain voltage of 1.0 VSD. This measurement was taken within the X-ray shielding enclosure with no X-ray exposure.
Fig. 4.
Fig. 4.
Simulated X-ray spectra. Electron beams were simulated from 10 to 70 kVp.
Fig. 5.
Fig. 5.
(a) Current response due to change in source-drain voltage. X-ray voltage and X-ray current are set at 40 kVp and 100 μA, respectively. (b) Sensitivity of the device with change in source-drain voltage. (c) Current response due to change in X-ray voltage. X-ray current and device source-drain are set at 100 μA and 1.0 VSD, respectively. (d) Sensitivity of the device with change in X-ray voltage. (e) GFET response due to change in X-ray current. X-ray voltage and device source-drain are set at 40 kVp and 1.0 VSD, respectively. (f) Sensitivity of the device with change in X-ray current.
Fig. 6.
Fig. 6.
(a) Sensitivity versus dose for change in X-ray tube voltage (at 100 μA) and X-ray tube current (at 40 kVp). All measurements taken here are at 1.0 Vsd. (b) Signal to noise ratios versus dose for change in X-ray tube voltage and current. Signal to noise is reported as ΔIsd/σnoise.
See this image and copyright information in PMC

References

    1. He Y, Petryk M, Liu Z, Chica DG, Hadar I, Leak C, Ke W, Spanopoulos I, Lin W, Chung DY, Wessels BW, He Z, and Kanatzidis MG, “CsPbBr3 perovskite detectors with 1.4% energy resolution for high-energy γ-rays,” Nat Photonics 15(1), 36–42 (2021).
    1. Kang J, and Cho JH, “Organic-inorganic hybrid perovskite electronics,” Physical Chemistry Chemical Physics 22(24), 13347–13357 (2020). - PubMed
    1. Zhou Z, Qiang Z, Sakamaki T, Takei I, Shang R, and Nakamura E, “Organic/Inorganic Hybrid p-Type Semiconductor Doping Affords Hole Transporting Layer Free Thin-Film Perovskite Solar Cells with High Stability,” ACS Appl Mater Interfaces, (2019). - PubMed
    1. Pan W, Wei H, and Yang B, “Development of Halide Perovskite Single Crystal for Radiation Detection Applications,” Front Chem 8, (2020). - PMC - PubMed
    1. Li S, Zhang C, Song JJ, Xie X, Meng JQ, and Xu S, “Metal halide perovskite single crystals: From growth process to application,” Crystals (Basel) 8(5), (2018).

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