High-performance monolayer MoS2nanosheet GAA transistor

Abstract

In this article, a 0.7 nm thick monolayer MoS₂nanosheet gate-all-around field effect transistors (NS-GAAFETs) with conformal high-κmetal gate deposition are demonstrated. The device with 40 nm channel length exhibits a high on-state current density of ~410μAμm^-1with a large on/off ratio of 6 × 10⁸at drain voltage = 1 V. The extracted contact resistance is 0.48 ± 0.1 kΩμm in monolayer MoS₂NS-GAAFETs, thereby showing the channel-dominated performance with the channel length scaling from 80 to 40 nm. The successful demonstration of device performance in this work verifies the integration potential of transition metal dichalcogenides for future logic transistor applications.

Keywords: gate-all-around (GAA); nanosheet (NS); transition metal dichalcogenides (TMDs).