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. 2024 Jan 3;11(2):nwad316.
doi: 10.1093/nsr/nwad316. eCollection 2024 Feb.

Selective nano-buckling improves the performance of graphene logic transistors

Tong Yang  1 , Ming Yang  1   2
Affiliations

Selective nano-buckling improves the performance of graphene logic transistors

Tong Yang et al. Natl Sci Rev. .
No abstract available

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Figures

Figure 1.
Figure 1.
An illustration of the partially nano-buckled graphene transistor. (a) Schematic diagram of the graphene transistor. (b) Operation mechanism of graphene-based transistor. Inhomogeneous current flow within the graphene (Gr) channel when BP is insulating, representing Boolean ‘0’ state. (c) Dual-channel propagations of graphene and BP bottom layer. Non-zero Vo represents Boolean ‘1’ state. (d) Room-temperature on/off ratio and carrier mobility of FETs based on various semiconductors including metal oxides, transition metal dichalcogenides, and puckered semiconductors. Adapted from ref. [7].
See this image and copyright information in PMC

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