Colossal Magnetoresistive Switching Induced by d⁰ Ferromagnetism of MgO in a Semiconductor Nanochannel Device with Ferromagnetic Fe/MgO Electrodes

Shinobu Ohya^{1

2

3}, Shun Tsuruoka¹, Masaya Kaneda¹, Hikari Shinya^{1

2

4

5

6}, Tetsuya Fukushima^{4

7

8}, Takahito Takeda¹, Yuriko Tadano¹, Tatsuro Endo¹, Le Duc Anh^{1

2}, Akira Masago^{4

9}, Hiroshi Katayama-Yoshida^{1

2

4}, Masaaki Tanaka^{1

2

3}

Affiliations

¹ Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
² Center for Spintronics Research Network, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
³ Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan.
⁴ Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka, 560-8531, Japan.
⁵ Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto, 611-0011, Japan.
⁶ Center for Spintronics Research Network (CSRN), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, Japan.
⁷ Research Center for Computational Design of Advanced Functional Materials, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8560, Japan.
⁸ The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan.
⁹ Research Institute for Value-Added-Information Generation, Japan Agency for Marin-Earth Science and Technology, 3173-25 Showa-machi, Yokohama, Kanagawa, 236-0001, Japan.

PMID: 38353134
DOI: 10.1002/adma.202307389

Colossal Magnetoresistive Switching Induced by d⁰ Ferromagnetism of MgO in a Semiconductor Nanochannel Device with Ferromagnetic Fe/MgO Electrodes

Shinobu Ohya et al. Adv Mater. 2024 Jun.

. 2024 Jun;36(23):e2307389.

doi: 10.1002/adma.202307389. Epub 2024 Mar 11.

Authors

Affiliations

¹ Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
² Center for Spintronics Research Network, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
³ Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan.
⁴ Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka, 560-8531, Japan.
⁵ Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto, 611-0011, Japan.
⁶ Center for Spintronics Research Network (CSRN), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, Japan.
⁷ Research Center for Computational Design of Advanced Functional Materials, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8560, Japan.
⁸ The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba, 277-8581, Japan.
⁹ Research Institute for Value-Added-Information Generation, Japan Agency for Marin-Earth Science and Technology, 3173-25 Showa-machi, Yokohama, Kanagawa, 236-0001, Japan.

PMID: 38353134
DOI: 10.1002/adma.202307389

Abstract

Exploring potential spintronic functionalities in resistive switching (RS) devices is of great interest for creating new applications, such as multifunctional resistive random-access memory and novel neuromorphic computing devices. In particular, the importance of the spin-triplet state of cation vacancies in oxide materials, which is induced by localized and strong O-2p on-site Coulomb interactions, in RS devices has been overlooked. d⁰ ferromagnetism sometimes appears due to the spin-triplet state and ferromagnetic Zener's double exchange interactions between cation vacancies, which are occasionally strong enough to make nonmagnetic oxides ferromagnetic. Here, for the first time, anomalous and colossal magneto-RS (CMRS) with very high magnetic field dependence is demonstrated by utilizing an unconventional RS device composed of a Ge nanochannel with all-epitaxial single-crystalline Fe/MgO electrodes. The device shows colossal and unusual behavior as the threshold voltage and ON/OFF ratio strongly depend on a magnetic field, which is controllable with an applied voltage. This new phenomenon is attributed to the formation of d⁰-ferromagnetic filaments by attractive Mg vacancies due to the spin-triplet states with ferromagnetic double exchange interactions and the ferromagnetic proximity effect of Fe on MgO. The findings will allow the development of energy-efficient CMRS devices with multifield susceptibility.

Keywords: d0 ferromagnetism; oxide electronics; resistive switching; spintronics; vacancy.

PubMed Disclaimer

References

1. J. Zhu, T. Zhang, Y. Yang, R. Huang, Appl. Phys. Rev. 2020, 7, 011312.
1. T. Shi, R. Wang, Z. Wu, Y. Sun, J. An, Q. Liu, Small Struct. 2021, 2, 2000109.
1. S. Gao, F. Zeng, M. Wang, G. Wang, C. Song, F. Pan, Sci. Rep. 2015, 5, 15467.
1. R. Liu, H. Wu, Y. Pang, H. Qian, S. Yu, IEEE Electron Device Lett. 2015, 36, 1380.
1. D. S. Jeong, R. Thomas, R. S. Katiyar, J. F. Scott, H. Kohlstedt, A. Petraru, C. S. Hwang, Rep. Prog. Phys. 2012, 75, 076502.

LinkOut - more resources

Full Text Sources
- Wiley
Miscellaneous
- NCI CPTAC Assay Portal

Save citation to file

Email citation

Add to Collections

Add to My Bibliography

Your saved search

Create a file for external citation management software

Your RSS Feed

Colossal Magnetoresistive Switching Induced by d⁰ Ferromagnetism of MgO in a Semiconductor Nanochannel Device with Ferromagnetic Fe/MgO Electrodes

Affiliations

Colossal Magnetoresistive Switching Induced by d⁰ Ferromagnetism of MgO in a Semiconductor Nanochannel Device with Ferromagnetic Fe/MgO Electrodes

Authors

Affiliations

Abstract

References

LinkOut - more resources

Full Text Sources

Miscellaneous