Low-Temperature Solution-Based Molybdenum Oxide Memristors

Abstract

Solution-based memristors have gained significant attention in recent years due to their potential for the low-cost, scalable, and environmentally friendly fabrication of resistive switching devices. This study is focused on the fabrication and characterization of solution-based molybdenum trioxide (MoO₃) memristors under different annealing temperatures (200 to 400 °C). A MoO₃ ink recipe is developed using water as the main solvent, enabling a simplified and cost-effective fabrication process. Material analysis reveals the presence of a Mo⁶⁺ oxidation state and an amorphous structure in the films annealed up to 250 °C. Electrical tests confirm a bipolar resistive switching behavior in the memristors according to the valence change mechanism (VCM). Endurance tests demonstrate stable memristors, indicating their robust nature after multiple cycles. Memristors annealed at 250 °C exhibit a nonvolatile behavior with a retention time up to 10⁵ s under ambient air conditions. The high reproducibility observed in these memristors highlights their potential for practical applications and scalability.

Figure 1

TG-DSC curve of the precursor solution (0.1 M).

Figure 2

(a) XRD diffractograms, (b) optical transmittance, (c) Mo 3d emission, and (d) O 1s emission of the MoO₃ thin films annealed at different temperatures. (e) AFM 3D images of the surface roughness in each condition (200, 250, and 300 °C).

Figure 3

Endurance tests of the MoO₃ memristors annealed at different temperatures: (a) 200, (b) 250, and (c) 300 °C, respectively. On/off ratio of each device at (d) 200, (e) 250, and (f) 300 °C.

Figure 4

(a) Device-to-device variation of set and reset voltages in the sample with devices annealed at 250 °C. (b) AFM 3D image of the surface roughness of the sample MoO₃ (0.2 M) annealed at 250 °C. (c) I–V curves obtained from endurance tests on devices with an active layer of MoO₃ with 0.2 M. (d) Retention characteristics with read at −0.1 V during 10⁵ s for the HRS (black) and the LRS (red) of the same device.