Local Environment of Sc and Y Dopant Ions in Aluminum Nitride Thin Films
- PMID: 38435801
- PMCID: PMC10902843
- DOI: 10.1021/acsaelm.3c01390
Local Environment of Sc and Y Dopant Ions in Aluminum Nitride Thin Films
Abstract
The local environments of Sc and Y in predominantly ⟨002⟩ textured, Al1-xDoxN (Do = Sc, x = 0.25, 0.30 or Y, x = 0.25) sputtered thin films with wurtzite symmetry were investigated using X-ray absorption (XAS) and photoelectron (XPS) spectroscopies. We present evidence from the X-ray absorption fine structure (XAFS) spectra that, when x = 0.25, both Sc3+ and Y3+ ions are able to substitute for Al3+, thereby acquiring four tetrahedrally coordinated nitrogen ligands, i.e., coordination number (CN) of 4. On this basis, the crystal radius of the dopant species in the wurtzite lattice, not available heretofore, could be calculated. By modeling the scandium local environment, extended XAFS (EXAFS) analysis suggests that when x increases from 0.25 to 0.30, CN for a fraction of the Sc ions increases from 4 to 6, signaling octahedral coordination. This change occurs at a dopant concentration significantly lower than the reported maximum concentration of Sc (42 mol % Sc) in wurtzite (Al, Sc)N. XPS spectra provide support for our observation that the local environment of Sc in (Al, Sc)N may include more than one type of coordination.
© 2024 The Authors. Published by American Chemical Society.
Conflict of interest statement
The authors declare no competing financial interest.
Figures
References
-
- Aigner R.; Kaitila J.; Ella J.; Elbrecht L.; Nessler W.; Handtmann M.; Herzog T. R.; Marksteiner S.. Bulk-Acoustic-Wave Filters: Performance Optimization and Volume Manufacturing. In 2003 IEEE MTT-S International Microwave Symposium Digest, Vols 1–3, 2001–2004; IEEE, 2003.
-
- Elfrink R.; Kamel T. M.; Goedbloed M.; Matova S.; Hohlfeld D.; van Andel Y.; van Schaijk R. Vibration energy harvesting with aluminum nitride-based piezoelectric devices. J. Micromech. Microeng. 2009, 19 (9), 094005 10.1088/0960-1317/19/9/094005. - DOI
-
- Mayrhofer P. M.; Riedl H.; Euchner H.; Stoger-Pollach M.; Mayrhofer P. H.; Bittner A.; Schmid U. Microstructure and piezoelectric response of YxAl1-xN thin films. Acta Mater. 2015, 100, 81–89. 10.1016/j.actamat.2015.08.019. - DOI
-
- Uehara M.; Shigemoto H.; Fujio Y.; Nagase T.; Aida Y.; Umeda K.; Akiyama M. Giant increase in piezoelectric coefficient of AlN by Mg-Nb simultaneous addition and multiple chemical states of Nb. Appl. Phys. Lett. 2017, 111 (11), 112901 10.1063/1.4990533. - DOI
-
- Sandu C. S.; Parsapour F.; Mertin S.; Pashchenko V.; Matloub R.; LaGrange T.; Heinz B.; Muralt P. Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces. Phys. Status Solidi A 2019, 216 (2), 1800569 10.1002/pssa.201800569. - DOI
LinkOut - more resources
Full Text Sources
Research Materials