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. 2024 Apr 10;14(8):657.
doi: 10.3390/nano14080657.

Investigation of Perovskite Solar Cells Using Guanidinium Doped MAPbI3 Active Layer

Ting-Chun Chang  1 , Ching-Ting Lee  1   2   3 , Hsin-Ying Lee  1   4
Affiliations

Investigation of Perovskite Solar Cells Using Guanidinium Doped MAPbI3 Active Layer

Ting-Chun Chang et al. Nanomaterials (Basel). .

Abstract

In this work, guanidinium (GA+) was doped into methylammonium lead triiodide (MAPbI3) perovskite film to fabricate perovskite solar cells (PSCs). To determine the optimal formulation of the resulting guanidinium-doped MAPbI3 ((GA)x(MA)1-xPbI3) for the perovskite active layer in PSCs, the perovskite films with various GA+ doping concentrations, annealing temperatures, and thicknesses were systematically modulated and studied. The experimental results demonstrated a 400-nm-thick (GA)x(MA)1-xPbI3 film, with 5% GA+ doping and annealed at 90 °C for 20 min, provided optimal surface morphology and crystallinity. The PSCs configured with the optimal (GA)x(MA)1-xPbI3 perovskite active layer exhibited an open-circuit voltage of 0.891 V, a short-circuit current density of 24.21 mA/cm2, a fill factor of 73.1%, and a power conversion efficiency of 15.78%, respectively. Furthermore, the stability of PSCs featuring this optimized (GA)x(MA)1-xPbI3 perovskite active layer was significantly enhanced.

Keywords: X-ray diffraction; crystallinity and crystal grain size; guanidinium-doped methylammonium lead triiodide; perovskite solar cells; surface morphology.

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Conflict of interest statement

The authors declare no conflict of interest.

Figures

Figure 1
Figure 1
(a) Schematic configuration and (b) corresponding energy level diagram of perovskite solar cells with (GA)x(MA)1−xPbI3 perovskite active layer.
Figure 2
Figure 2
XRD patterns of (GA)x(MA)1−xPbI3 films with various GA+ doping concentrations.
Figure 3
Figure 3
SEM images of (GA)x(MA)1−xPbI3 films with various doping concentrations of (a) 0, (b) 5, (c) 10, and (d) 15%.
Figure 4
Figure 4
(a) XRD patterns and (b) relating crystal grain size of (GA)0.05(MA)0.95PbI3 films treated with various annealing temperatures.
Figure 5
Figure 5
SEM images of (GA)0.05(MA)0.95PbI3 films treated with various annealing temperatures of (a) 70, (b) 90, (c) 110, and (d) 130 °C.
Figure 6
Figure 6
(a) XRD patterns and (b) relating crystal grain size of (GA)0.05(MA)0.95PbI3 films annealed for various times.
Figure 7
Figure 7
XRD patterns of (GA)0.05(MA)0.95PbI3 films with various thicknesses.
Figure 8
Figure 8
AFM images of (GA)0.05(MA)0.95PbI3 films with various thicknesses of (a) 300, (b) 400, and (c) 500 nm. (d) Relating crystal grain size and roughness of (GA)0.05(MA)0.95PbI3 films with various thicknesses.
Figure 9
Figure 9
Absorption spectra of (GA)0.05(MA)0.95PbI3 films with various thicknesses. Inserted figure shows extended absorption spectra between wavelength of 700 and 800 nm.
Figure 10
Figure 10
(a) Current density-voltage, (b) dark current density-voltage, (c) external quantum efficiency and integrated current density characteristics of PSCs using (GA)0.05(MA)0.95PbI3 perovskite active layer with thicknesses of 300, 400, and 500 nm.
Figure 11
Figure 11
(a) Current density-voltage, (b) dark current density-voltage, (c) external quantum efficiency and integrated current density characteristics, and (d) 200-h stability test of PSCs with MAPbI3 perovskite active layer and with optimal (GA)0.05(MA)0.95PbI3 perovskite active layer.
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