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. 2024 May 18;15(1):4250.
doi: 10.1038/s41467-024-48542-4.

High spin axion insulator

Affiliations

High spin axion insulator

Shuai Li et al. Nat Commun. .

Abstract

Axion insulators possess a quantized axion field θ = π protected by combined lattice and time-reversal symmetry, holding great potential for device applications in layertronics and quantum computing. Here, we propose a high-spin axion insulator (HSAI) defined in large spin-s representation, which maintains the same inherent symmetry but possesses a notable axion field θ = (s + 1/2)2π. Such distinct axion field is confirmed independently by the direct calculation of the axion term using hybrid Wannier functions, layer-resolved Chern numbers, as well as the topological magneto-electric effect. We show that the guaranteed gapless quasi-particle excitation is absent at the boundary of the HSAI despite its integer surface Chern number, hinting an unusual quantum anomaly violating the conventional bulk-boundary correspondence. Furthermore, we ascertain that the axion field θ can be precisely tuned through an external magnetic field, enabling the manipulation of bonded transport properties. The HSAI proposed here can be experimentally verified in ultra-cold atoms by the quantized non-reciprocal conductance or topological magnetoelectric response. Our work enriches the understanding of axion insulators in condensed matter physics, paving the way for future device applications.

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Conflict of interest statement

The authors declare no competing interests.

Figures

Fig. 1
Fig. 1. Model of the HSAI.
a Schematic for the HSAI defined on the s,mz space. The blue arrows represent the electron spin with different magnetic quantum number mz, which takes values ranging from −s to s individually. b Energy spectra of the spin-3/2 HSAI along M → Γ → R path on a slab of thickness Lz with (red solid lines) and without (blue dashed lines) the magnetic exchange interaction. Here, the black lines refer to bulk bands. Inset: Energy dispersion for the spin-3/2 HSAI in the absence of magnetic exchange term near the charge neutral point (solid lines) and the fitting data (markers). c Layer-resolved Chern number Cz and the cumulative Chern number C~z=Lz/2zCz versus the layer index z for the spin-3/2 HSAI. The surface Chern numbers Csurftop(bot) that summarize the layer-resolved Chern number on the upper (lower) half side is −2 (+ 2). d Surface Chern number as a function of the Fermi energy EF for the spin-3/2 HSAI. Here, the thickness of the HSAI slab is Lz = 20.
Fig. 2
Fig. 2. Transport properties of the spin-3/2 HSAI.
a Schematic current flow in a HSAI. The red arrows denote the quantized helical hinge currents. b Energy spectrum and the average position 〈z/Lz〉 on the front surface for a HSAI nanowire with Ly = 30, Lz = 16. c Spectrum density A(kx, E) for the front lower hinge as labeled by the blue line in (a) on the kx − E plane. Here, the system size is Ly = 30, Lz = /2. The white dashed line represents the Fermi energy EF = 0.1. The white stars that mark the intersects between the Fermi energy and the spectrum are the Fermi momenta kF1 and kF2. d Top and middle panels are the current density Jx(z), current flux Ix(z) and its z-averaged flux 〈Ix(z)〉 versus the layer index z for a semi-infinite system with size Ly = 30, Lz = /2. The blue dots are the fitting data. Bottom panel shows the distribution of the moving averaged current Ix(z)MA on the front surface with system size Ly = 30, Lz = 150. e Bird’s eye view (top panel) and high-angle shot (bottom panel) for the six terminal device. f Ensemble-averaged non-reciprocal conductances versus the Fermi energy in the clean limit (W=0), with non-magnetic Anderson disorders of strength W = 1 and with magnetic Anderson disorders of strength Wz = 0.3. Here, the system size is Lx = 31, Ly = 20, Lz = 21, and the size of transverse terminals is 10 × 10. g Experimental setup to detect the non-reciprocal conductance. In this setup, terminals 2, 4, 5, and 6 are grounded. The voltage is applied alternatively to terminal 1 or terminal 3. h Corresponding temporal dependent current output with parameters G13 = 4.5e2/h, G31 = 2.5e2/h. i F(ω) as a function of the frequency ω.
Fig. 3
Fig. 3. Axion term and topological magneto-electric effect.
a and (f) Hybrid Wannier charge centers znk along R → Γ → M → R loop inside the first Brillouin zone for a six-layer HSAI slab with spin-3/2 (a) and spin-5/2 (f), respectively. b and g are corresponding axion terms and the surface Chern numbers versus the inverse layer thickness obtained by using the HWFs. c Magnetic field induced charge distribution along z^-direction and the layer-resolved Chern number for a spin-3/2 HSAI with Lz = 24. Here, the charge polarization is obtained on a HSAI slab with open boundary condition along y^-direction (Ly = 40) but periodic boundary condition along x^-direction. The magnetic flux inside one unit cell is ϕ0=Ba02=0.01h/e. d Electric field induced orbital magnetization for a spin-3/2 HSAI with Lz = 20. The black dashed line shows the ideal case (IC) with an exact axion term θ = 4π. e Size scaling of the axion term θCSslab/π, polarization coefficient P/(αϕ), and magnetization coefficient M/(αδU) at δU = 0.001. We have checked that the slight deviation of P/(αϕ) originates from the finite size effect.
Fig. 4
Fig. 4. Phase transition in spin-3/2 HSAI.
a Canted HSAI under an in-plane magnetic field. γ is the canting angle between the magnetic vector and z^-axis (polar angle). b Energy gaps versus γ for spin-3/2 HSAI and for spin-1/2 axion insulator, respectively. c Energy spectra for the HSAI with spin-3/2 (black solid lines) and spin-1/2 (blue dashed lines) at γ = π/4. d Hybrid Wannier charge center znk as a function of kx for a HSAI slab at γ = π/4. e Surface Chern numbers obtained from the effective Hamiltonian in Eq. (1) and the HWFs versus γ. f Axion term θCSslab/π, polarization coefficient P/(αϕ) (ϕ0 = 0.01h/e) and magnetization coefficient M/(αδU) (δU = 0.001) versus γ. The thickness of the HSAI is Lz = 20.

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