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. 2024 Jun 13;14(27):18957-18969.
doi: 10.1039/d4ra01559b. eCollection 2024 Jun 12.

Numerical simulation to optimize power conversion efficiency of an FTO/GO/Cs2AgBiBr6/Cu2O solar cell

Ghulam M Mustafa  1 , Bisma Younas  2 , Sadaf Saba  3 , Zainab Mufarreh Elqahtani  4 , Norah Alwadai  4 , Sikandar Aftab  5
Affiliations

Numerical simulation to optimize power conversion efficiency of an FTO/GO/Cs2AgBiBr6/Cu2O solar cell

Ghulam M Mustafa et al. RSC Adv. .

Abstract

Efficient conversion of solar power to electrical power through the development of smart, reliable, and environmentally friendly materials is a key focus for the next-generation renewable energy sector. The involvement of degradable and toxic elements present in hybrid perovskites presents serious concerns regarding the commercial viability of these materials for the solar cell industry. In this study, a solar cell with a stable, nondegradable, and lead-free halide-based double perovskite Cs2AgBiBr6 as the absorber layer, Cu2O as a hole transport layer, and GO as the electron transport layer has been simulated using SCAPS 1D. The thickness of the absorber, electron transport, and hole transport layers are tuned to optimize the performance of the designed solar cell. Notably, perovskite solar cells functioned most efficiently with an electron affinity value of 4.0 eV for Cu2O. In addition, the effect of variation of series resistance and temperature on generation and recombination rates, current density, and quantum efficiency has been elaborated in detail. The findings of this study provide valuable insight and encouragement toward the realization of a non-toxic, inorganic perovskite solar device and will be a significant step forward in addressing environmental concerns associated with perovskite solar cell technology.

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Conflict of interest statement

There are no conflicts to declare.

Figures

Fig. 1
Fig. 1. (a) Device configuration of simulated perovskite solar cell, (b) energy-band diagram without contact between layers (c) energy-band diagram after contacts between layers (d) current density–voltage curve.
Fig. 2
Fig. 2. SCAPS simulation procedure.
Fig. 3
Fig. 3. Variation of (a) current density versus voltage, (b) Voc and Jsc, and (c) FF and PCE with thicknesses of HTL.
Fig. 4
Fig. 4. Variation of (a) current density versus voltage, (b) Voc and Jsc, and (c) FF and PCE with thicknesses of ETL.
Fig. 5
Fig. 5. Variation of (a) current density versus voltage, (b) Voc and Jsc, and (c) FF and PCE with thicknesses of Cs2AgBiBr6.
Fig. 6
Fig. 6. Variation of (a) current density versus voltage, (b) Voc and Jsc, and (c) FF and PCE with electron affinity of HTL.
Fig. 7
Fig. 7. Variation of (a) current density versus voltage, (b) Voc and Jsc, and (c) FF and PCE with electron affinity of ETL.
Fig. 8
Fig. 8. Variation of (a) current density versus voltage, (b) Voc and Jsc, and (c) FF and PCE with electron affinity of Cs2AgBiBr6.
Fig. 9
Fig. 9. Variation of (a) current density versus voltage, (b) Voc and Jsc, and (c) FF and PCE with defect density (Nt) of Cs2AgBiBr6.
Fig. 10
Fig. 10. Variation of (a) current density versus voltage, (b) Voc and Jsc, and (c) FF and PCE with doping concentration (NA) of Cs2AgBiBr6.
Fig. 11
Fig. 11. Variation of (a) Current density versus voltage, (b) Voc and Jsc, and (c) FF and PCE with doping concentration (NA) of HTL.
Fig. 12
Fig. 12. Variation of (a) current density versus voltage, (b) Voc and Jsc, and (c) FF and PCE with doping concentration (ND) of ETL.
Fig. 13
Fig. 13. Variation of (a) current density versus voltage, (b) Voc and Jsc, and (c) FF and PCE with temperature.
Fig. 14
Fig. 14. Variation of (a) current density versus voltage, (b) Voc and Jsc, and (c) FF and PCE with series resistance.
Fig. 15
Fig. 15. Calculated quantum efficiency for FTO/GO/Cs2AgBiBr6/Cu2O.
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