A Dibenzo[g,p]chrysene-Based Organic Semiconductor with Small Exciton Binding Energy via Molecular Aggregation
- PMID: 38994550
- DOI: 10.1002/anie.202409964
A Dibenzo[g,p]chrysene-Based Organic Semiconductor with Small Exciton Binding Energy via Molecular Aggregation
Abstract
Exciton binding energy (Eb) is understood as the energy required to dissociate an exciton in free-charge carriers, and is known to be an important parameter in determining the performance of organic opto-electronic devices. However, the development of a molecular design to achieve a small level of Eb in the solid state continues to lag behind. Here, to investigate the relationship between aggregation and Eb, star-shaped π-conjugated compounds DBC-RD and TPE-RD were developed using dibenzo[g,p]chrysene (DBC) and tetraphenylethylene (TPE). Theoretical calculations and physical measurements in solution showed no apparent differences between DBC-RD and TPE-RD, indicating that these molecules possess similar properties on a single-molecule level. By contrast, pristine films incorporating these molecules showed significantly different levels of electron affinity, ionization potential, and optical gap. Also, DBC-RD had a smaller Eb value of 0.24 eV compared with that of TPE-RD (0.42 eV). However, these molecules showed similar Eb values under dispersed conditions, which suggested that the decreased Eb of DBC-RD in pristine film is induced by molecular aggregation. By comparison with TPE-RD, DBC-RD showed superior performances in single-component organic solar cells and organic photocatalysts. These results indicate that a molecular design suitable for aggregation is important to decrease the Eb in films.
Keywords: dielectric constants; exciton binding energies; organic photocatalysts; organic semiconductors; organic solar cells.
© 2024 The Author(s). Angewandte Chemie International Edition published by Wiley-VCH GmbH.
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Grants and funding
- 20H02814/JSPS KAKENHI
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- JP20H05836/JSPS KAKENHI
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- JPMJCR20R1/JST CREST
- JPMJMI22I1/JST-Mirai Program
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- JPMXP09S21OS0010/Osaka University NOF
- 21500248-0/New Energy and Industrial Technology Development Organization
- JPMJSF23B3/JST A-STEP
- 202310004/Mitsubishi Foundation
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