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. 2024 Sep 1;31(Pt 5):1067-1070.
doi: 10.1107/S1600577524007318. Epub 2024 Aug 25.

Comparing single-shot damage thresholds of boron carbide and silicon at the European XFEL

Marziyeh Tavakkoly  1 , Jaromir Chalupsky  2 , Vera Hajkova  2 , Wolfgang Hillert  1 , Simon Jelinek  3 , Libor Juha  2 , Mikako Makita  4 , Tommaso Mazza  4 , Michael Meyer  4 , Jacobo Montano  4 , Harald Sinn  4 , Vojtech Vozda  2 , Maurizio Vannoni  4
Affiliations

Comparing single-shot damage thresholds of boron carbide and silicon at the European XFEL

Marziyeh Tavakkoly et al. J Synchrotron Radiat. .

Abstract

Xray free-electron lasers (XFELs) enable experiments that would have been impractical or impossible at conventional X-ray laser facilities. Indeed, more XFEL facilities are being built and planned, with their aim to deliver larger pulse energies and higher peak brilliance. While seeking to increase the pulse power, it is quintessential to consider the maximum pulse fluence that a grazing-incidence FEL mirror can withstand. To address this issue, several studies were conducted on grazing-incidence damage by soft X-ray FEL pulses at the European XFEL facility. Boron carbide (B4C) coatings on polished silicon substrate were investigated using 1 keV photon energy, similar to the X-ray mirrors currently installed at the soft X-ray beamlines (SASE3). The purpose of this study is to compare the damage threshold of B4C and Si to determine the advantages, tolerance and limits of using B4C coatings.

Keywords: B4C coating; X-ray mirrors; XFEL; damage threshold; single-shot damage threshold.

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Conflict of interest statement

The authors declare no competing interests.

Figures

Figure 1
Figure 1
Schematic of the experimental setup. AT: attenuator; XGM: X-ray gas monitor.
Figure 2
Figure 2
Representative single-shot damage craters at 9 mrad grazing-incidence angle. (Left) Silicon. (Right) B4C.
Figure 3
Figure 3
Normalized fluence versus damaged area at 1 keV. Each damaged area was measured for every pulse energy, with the red curve representing the beam profile. (Top) Silicon with threshold energy of 261 µJ. (Bottom) B4C with threshold energy of 549 µJ.
See this image and copyright information in PMC

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