Bottom-Up Porous Graphene Synthesis and its Applications
- PMID: 39492795
- DOI: 10.1002/chem.202403386
Bottom-Up Porous Graphene Synthesis and its Applications
Abstract
Incorporation of regular order pores/holes/defects into semimetalic graphene sheets can tune the band gap up to 1 eV or more introducing semiconducting property and therefore exhibiting promising applications for organic electronics such as field-effect transistors (FETs), molecular sieve membranes, gas sensing, catalysis devices, etc. In this mini review, we focused on bottom-up approaches to introduce periodic homogeneous pores into graphene and nanographene and graphene nanoribbons along with their characteristics and potential applications in various fields.
Keywords: Graphene nanoribbons; Nanoporous graphene; Organic electronics; Porous/Holey graphene; Scholl reaction.
© 2024 Wiley-VCH GmbH.
References
-
- A. K. Geim, K. S. Novoselov, Nat. Mater. 2007, 6, 183.
-
- K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, Science 2004, 306, 666.
-
- K. S. Novoselov, V. I. Falko, L. Colombo, P. R. Gellert, M. G. Schwab, K. Kim, Nature 2012, 490, 192.
-
- R. F. Service, Science 2009, 324, 875–877.
-
- J. Azadmanjiri, V. K. Srivastav, P. Kumar, M. Nikzad, J. Wang, A. Yu, J. Mater. Chem. A 2018, 6, 702.
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