Cognitive-Linguistic Profiles Underlying Reading Difficulties Within the Unique Characteristics of Hebrew Language and Writing System
- PMID: 39777979
- PMCID: PMC11706672
- DOI: 10.1002/dys.1799
Cognitive-Linguistic Profiles Underlying Reading Difficulties Within the Unique Characteristics of Hebrew Language and Writing System
Abstract
While the multiple cognitive deficits model of reading difficulties (RD) is widely supported, different cognitive-linguistic deficits may manifest differently depending on language and writing system characteristics. This study examined cognitive-linguistic profiles underlying RD in Hebrew, characterised by rich Semitic morphology and two writing versions differing in orthographic consistency-a transparent-pointed version and a deep-unpointed version. A two-step cluster analysis grouped 96 s graders and 81 fourth graders based on their phonological awareness (PA), rapid naming (RAN), orthographic knowledge (OK) and morphological-pattern identification (MPI) abilities. Word-reading accuracy and fluency in both writing versions were also examined. The analysis revealed substantial variation in cognitive-linguistic functioning levels, identifying distinct homogeneous profiles at both ages. PA and RAN deficits were most significant across grades. A distinct OK deficit profile emerged among fourth graders, particularly manifested in Hebrew's deep-unpointed script. Moreover, the findings converge on the conclusion that while the phonological deficit is primary and persists over time, its importance is secondary to the main morphological deficit, reflecting a central independent factor in explaining RD in Hebrew. These results support a hybrid-dynamic perspective, emphasising how the relevance of different cognitive-linguistic deficits underlying RD varies with development, influenced by Hebrew's unique orthographic and morphological characteristics.
Keywords: naming; phonological awareness; phonology; reading; reading difficulties.
© 2025 The Author(s). Dyslexia published by John Wiley & Sons Ltd.
Conflict of interest statement
The authors declare no conflicts of interest.
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