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. 2025 Jan 18;25(2):546.
doi: 10.3390/s25020546.

The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO2/SiO2 Double-Layer

Miloš Marjanović  1 , Stefan D Ilić  2 , Sandra Veljković  1 , Nikola Mitrović  1 , Umutcan Gurer  3 , Ozan Yilmaz  3 , Aysegul Kahraman  4 , Aliekber Aktag  3 , Huseyin Karacali  3 , Erhan Budak  3 , Danijel Danković  1 , Goran Ristić  1 , Ercan Yilmaz  3
Affiliations

The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO2/SiO2 Double-Layer

Miloš Marjanović et al. Sensors (Basel). .

Abstract

We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO2/SiO2 double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO2, are enhanced by incorporating high-k dielectric materials such as HfO2 to reduce oxide thickness in modern radiation sensors. The fabrication steps of the sensor are outlined, and model parameters, including the threshold voltage and transconductance, are extracted based on experimental data. Experimental setups for measuring electrical characteristics and irradiation are described, and a method for determining model parameters dependent on the accumulated dose is provided. A SPICE model card is proposed, including parameters for two dielectric thicknesses: (30/10) nm and (40/5) nm. The sensitivities of the sensors are 1.685 mV/Gy and 0.78 mV/Gy, respectively. The model is calibrated for doses up to 20 Gy, and good agreement between experimental and simulation results validates the proposed model.

Keywords: RADFET; SPICE model; electrical simulation; high-k materials; radiation sensor.

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Conflict of interest statement

The authors declare no conflicts of interest. The funders had no role in the design of the study; in the collection, analyses, or interpretation of data; in the writing of the manuscript; or in the decision to publish the results.

Figures

Figure 1
Figure 1
(a) Cross-sectional view of the MOSFET structure with the high-k dielectric; (b) bonding diagram of the radiation sensor.
Figure 2
Figure 2
(a) Block diagram of the measurement setup; (b) measurement setup in the TENMAK lab.
Figure 3
Figure 3
(a) Block diagram of the radiation source setup; (b) radiation setup in the TENMAK lab.
Figure 4
Figure 4
Transfer characteristic showing the square root of the drain current as a function of voltage, |VGS|, for double-layer dielectric HfO2/SiO2 RADFETs of (a) (30/10) nm and (b) (40/5) nm.
Figure 5
Figure 5
Dependence of the absolute value of the threshold voltage on the accumulated dose for double-layer dielectric HfO2/SiO2 RADFETs of (a) (30/10) nm and (b) (40/5) nm.
Figure 6
Figure 6
Transconductance as a function of voltage, |VGS|, for double-layer dielectric HfO2/SiO2 RADFETs of (a) (30/10) nm and (b) (40/5) nm.
Figure 7
Figure 7
Dependence of the SPICE model parameter KP on the accumulated dose for double-layer dielectric HfO2/SiO2 RADFETs of (a) (30/10) nm and (b) (40/5) nm.
Figure 8
Figure 8
ID-VDS characteristic of double-layer dielectric HfO2/SiO2 RADFETs of (a) (30/10) nm and (b) (40/5) nm.
Figure 9
Figure 9
Simulation circuit.
Figure 10
Figure 10
Experimental and simulated transfer characteristics for double-layer dielectric HfO2/SiO2 RADFETs of (a) (30/10) nm and (b) (40/5) nm.
Figure 11
Figure 11
Simulated transfer characteristics at different temperatures for double-layer dielectric HfO2/SiO2 RADFETs of (a) (30/10) nm and (b) (40/5) nm.
Figure 12
Figure 12
Simulated transfer characteristics for double-layer dielectric HfO2/SiO2 RADFETs with different channel widths.
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