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. 2025 Feb 6;16(1):1417.
doi: 10.1038/s41467-025-56357-0.

Multi-project wafer runs for electronic graphene devices in the European 2D-Experimental Pilot Line project

Bárbara Canto  1 , Martin Otto  1 , Arantxa Maestre  2   3 , Alba Centeno  2 , Amaia Zurutuza  2 , Bianca Robertz  1 , Eros Reato  4 , Bartos Chmielak  1 , Stefanie L Stoll  1 , Andreas Hemmetter  1   4 , Florian Schlachter  1 , Lisa Ehlert  1 , Sha Li  1   5 , Daniel Neumaier  1   6 , Gordon Rinke  1 , Zhenxing Wang  7 , Max C Lemme  8   9
Affiliations

Multi-project wafer runs for electronic graphene devices in the European 2D-Experimental Pilot Line project

Bárbara Canto et al. Nat Commun. .

Abstract

The commercialization of electronic devices based on graphene has not yet been successful, even 20 years after its first isolation. To this end, the European Commission is supporting research toward establishing a European experimental pilot line for electronic and optoelectronic devices based on graphene and related two-dimensional (2D) materials, namely the Experimental Pilot Line (2D-EPL) project. Here, we report the results obtained during the first and third multi-project wafer (MPW) runs completed at the end of 2022 (MPW run 1) and 2023 (MPW run 3) as an outcome of the 2D-EPL. Test devices were measured across the wafers to assess the device quality and variability before delivering the fabricated dies to the customers. Raman spectroscopy confirmed minimal structural changes in the graphene caused by the fabrication process, while electrical measurements of two different device types verified the device specifications defined in the process design kit.

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Conflict of interest statement

Competing interests: B.C., M.O., B.R., B.Ch., S.L., A.H., F.S., L.E., S.L.S, D.N., G.R., Z.W., and M.C.L. are employees of the non-profit company AMO GmbH, whereas A.M., A.C., and A.Z. are employees of Graphenea S.A. Both companies are partners in the 2D-EPL project and are working on the development and integration of electronic devices based on graphene and other 2D materials. E.R. has no competing interest.

Figures

Fig. 1
Fig. 1. Schematic diagram of the Multi Project Wafer (MPW) workflow for a graphene field effect transistor (GFET).
a Schematic diagram of the MPW run 1 workflow. b Schematic diagram of the MPW run 3 workflow. In both cases the 2D Material (2DM) used was CVD-graphene.
Fig. 2
Fig. 2. Wafer fabricated in the Multi project wafer (MPW) runs and test devices.
a Photograph of the 150 mm wafer with all the customer designs for MPW run 1. Each die has a size of 1 × 1 cm2. Panel a is published with permission from the Rightsholders. The panel has been blurred to protect the confidentiality of the customer designs. b Schematic of the mask design (200 mm) for MPW run 1; the green dies are the AMO test dies. c Schematic of the mask design (200 mm) for MPW run 3. The green dies are the AMO test dies. d Optical microscopy image of one cross-bridge device of MPW run 3 for four tip measurements. e Optical microscopy image of one Transfer length method (TLM) device from MPW run 1.
Fig. 3
Fig. 3. Electrical characterization of the test devices for MPW runs 1 (130 devices) and 3 (170 devices).
a Transfer curves (drain current Id versus gate voltage Vg) for the MPW run 1 devices (sweep range from − 40 V to + 40 V). b Transfer curves for the MPW run 3 devices (sweep range from − 10 V to + 10 V). c Gate currents Ig for MPW run 1. d Gate currents for MPW run 3. e Box plots showing the field effect mobility µ4P,max of each device measured with 4 probes for both MPW runs. f Dirac voltages (forward and backward) and hysteresis for both MPW runs.
Fig. 4
Fig. 4. Electrical characterization of the test devices for MPW run 1 and MPW run 3.
a Mobility map for MPW run 1 and (b) MPW run 3. The values represent the median value of the maximum four-probe mobility of all devices within the die. c Map with the number of working devices per die (there are 10 devices per die) for MPW run 1 (total wafer yield: 94%) from 130 devices measured. d Map with the number of working devices per die for MPW run 3 (total wafer yield: 87 %) from 170 devices measured. Each die has 10 devices. e Sheet resistance for the MPW run 1 wafer (forward sweep). f Sheet resistance for the MPW run 3 wafer (forward sweep).
See this image and copyright information in PMC

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