Perovskite spin light-emitting diodes with simultaneously high electroluminescence dissymmetry and high external quantum efficiency

Shuai He^#^{1

2}, Weixi Lin^#^{2

3}, De Yu¹, Junwei Shi⁴, Zhen Yin¹, Changjiu Sun^{5

6}, Haoliang Liu^{1

2}, Chen Zhang³, Jianyu Yuan⁴, Sai Bai⁷, Shumin Xiao², Guankui Long⁸, Mingjian Yuan^{5

6}, Yuanzhi Jiang^{9

10}, Yimu Chen^{11

12}, Qinghai Song^{13

14}

Affiliations

¹ School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Guangdong, China.
² Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Guangdong, China.
³ Pengcheng Laboratory, Shenzhen, Guangdong, China.
⁴ Institute of Functional Nano & Soft Materials, Soochow University, Suzhou, China.
⁵ College of Chemistry, Nankai University, Tianjin, China.
⁶ State Key Laboratory of Advanced Chemical Power Sources, Nankai University, Tianjin, China.
⁷ Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China.
⁸ School of Materials Science and Engineering, Nankai University, Tianjin, China.
⁹ College of Chemistry, Nankai University, Tianjin, China. yz.jiang@nankai.edu.cn.
¹⁰ State Key Laboratory of Advanced Chemical Power Sources, Nankai University, Tianjin, China. yz.jiang@nankai.edu.cn.
¹¹ School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Guangdong, China. chenyimu@hit.edu.cn.
¹² Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Guangdong, China. chenyimu@hit.edu.cn.
¹³ School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Guangdong, China. qinghai.song@hit.edu.cn.
¹⁴ Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Guangdong, China. qinghai.song@hit.edu.cn.

^# Contributed equally.

PMID: 40038280
PMCID: PMC11880525
DOI: 10.1038/s41467-025-57472-8

Perovskite spin light-emitting diodes with simultaneously high electroluminescence dissymmetry and high external quantum efficiency

Shuai He et al. Nat Commun. 2025.

. 2025 Mar 5;16(1):2201.

doi: 10.1038/s41467-025-57472-8.

Authors

Affiliations

¹ School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Guangdong, China.
² Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Guangdong, China.
³ Pengcheng Laboratory, Shenzhen, Guangdong, China.
⁴ Institute of Functional Nano & Soft Materials, Soochow University, Suzhou, China.
⁵ College of Chemistry, Nankai University, Tianjin, China.
⁶ State Key Laboratory of Advanced Chemical Power Sources, Nankai University, Tianjin, China.
⁷ Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China.
⁸ School of Materials Science and Engineering, Nankai University, Tianjin, China.
⁹ College of Chemistry, Nankai University, Tianjin, China. yz.jiang@nankai.edu.cn.
¹⁰ State Key Laboratory of Advanced Chemical Power Sources, Nankai University, Tianjin, China. yz.jiang@nankai.edu.cn.
¹¹ School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Guangdong, China. chenyimu@hit.edu.cn.
¹² Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Guangdong, China. chenyimu@hit.edu.cn.
¹³ School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Guangdong, China. qinghai.song@hit.edu.cn.
¹⁴ Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Guangdong, China. qinghai.song@hit.edu.cn.

^# Contributed equally.

PMID: 40038280
PMCID: PMC11880525
DOI: 10.1038/s41467-025-57472-8

Abstract

Realizing high electroluminescence dissymmetric factor and high external quantum efficiency at the same time is challenging in light-emitting diodes with direct circularly polarized emission. Here, we show that high electroluminescence dissymmetric factor and high external quantum efficiency can be simultaneously achieved in light-emitting diodes based on chiral perovskite quantum dots. Specifically, chiral perovskite quantum dots with chiral-induced spin selectivity can concurrently serve as localized radiative recombination centers of spin-polarized carriers for circularly polarized emission, thereby suppressing the relaxation of spins, Meanwhile, improving the chiral ligand exchange efficiency is found to synergistically promote their spin selectivity and optoelectronic properties so that chiroptoelectronic performance of resulting devices can be facilitated. Our device simultaneously exhibits high electroluminescence dissymmetric factor (R: 0.285 and S: 0.251) and high external quantum efficiency (R: 16.8% and S: 16%), demonstrating their potential in constructing high-performance chiral light sources.

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Conflict of interest statement

Competing interests: The authors declare no competing interests.

Figures

**Fig. 1. Optimization of chiroptic properties and spin selectivity in chiral PQDs for spin-LEDs.**
a Schematic illustration of the mechanism of spin-LEDs based on chiral PQDs. ex: exciton, OAm: oleylamine, OAc: oleic acid. b CD and c CPL spectra of chiral CsPbBr₃ PQDs with different ligand exchanged processes. US ultrasonic treatment. The corresponding d g_abs and e g_lum values of chiral CsPbBr₃ PQDs with different ligand exchange processes. f Schematic illustration of mCP-AFM measurements. Averaged I-V curves under different injected spin polarization of samples based on R-PQDs g with and h without US treatment. P: spin polarization efficiency. 30 I-V curves measured from different locations of a sample are averaged.

**Fig. 2. Optoelectronic properties of chiral PQDs.**
a XRD, b steady-state PL and PLQY, and c TPRLspectra of chiral CsPbBr₃ PQDs with and without US treatment. I-V characteristic curves of devices based on chiral PQDs d without and e with US treatments. V_TFL trap-filling limit voltage. f C-ω and g N_t-E_ω spectra of devices based on chiral PQDs with and without US treatment. Chiral PQDs used: R-PQDs.

**Fig. 3. Mechanism of the enhanced ligand exchange strategy.**
TEM images of a as-synthesized achiral CsPbBr₃ PQDs, b achiral CsPbBr₃ PQDs without US treatment, i.e., achiral CsPbBr₃ PQDs after continuous stirring, c achiral CsPbBr₃ PQDs after US treatment without the addition of chiral ligands, and d chiral CsPbBr₃ PQDs after ligand exchange with US treatment. Scale bar: 30 nm. Inset: corresponding HRTEM of different types of CsPbBr₃ PQDs. Scale bar: 2 nm. e N 1s core level spectra and f FTIR spectra of different types of PQDs. Calculated g S_(C=O)/S_(-COO⁻₎ and h S_(C=C)/S_(C-H) values obtained from FTIR spectra. i ¹H-NMR spectra of chiral ligands and chiral CsPbBr₃ PQDs dispersed in toluene-d8. j ¹H-NMR spectra of different types of PQDs dissolved in DMSO-d6. k Calculated density density and chiral ligand exchange efficiency of different types of PQDs dissolved in DMSO-d6. Chiral PQDs used: R-PQDs.

**Fig. 4. Tunable chiroptic properties of chiral PQDs.**
CPL spectra of a chiral CsPbCl_1.5Br_1.5 PQDs and b chiral CsPbI₃ PQDs with R-/S-MBA. CD spectra of c chiral CsPbCl_1.5Br_1.5 PQDs and d chiral CsPbI₃ PQDs with R-/S-MBA. CPL spectra of chiral CsPbBr₃ PQDs with e R-/S-OcAm and f R-/S-AOA. CD spectra of chiral CsPbBr₃ PQDs with g R-/S-OcAm and h R-/S-AOA. The above results show that the enhanced ligand exchange method is compatible with PQDs with different compositions and different types of chiral ligands.

**Fig. 5. Spin-LEDs based on chiral CsPbBr₃ PQDs with the enhanced ligand exchange strategy.**
a EL, b J-L-V, and c EQE spectra of spin-LEDs based on chiral CsPbBr₃ PQDs with R- and S-MBA. Corresponding σ⁺ and σ⁻ emission spectra of d R-LED and e S-LED. f Wavelength-dependent g_EL of R-/S-LEDs. g Summary of g_EL and EQE of perovskite spin-LEDs in the literature and this work. h Time-dependent EL intensity of R-LED at an initial luminance of 100 cd m⁻². i T₅₀ of R-LEDs at different initial brightness levels.

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References

1. Long, G. et al. Chiral-perovskite optoelectronics. Nat. Rev. Mater.5, 423–439 (2020).
1. Yang, S. H. et al. Chiral spintronics. Nat. Rev. Phys.3, 328–343 (2021).
1. Crassous, J. et al. Materials for chiral light control. Nat. Rev. Mater.8, 365–371 (2023).
1. Furlan, F. et al. Chiral materials and mechanisms for circularly polarized light-emitting diodes. Nat. Photonics18, 658–668 (2024).
1. Zhang, D.-W. et al. Recent advances in circularly polarized electroluminescence based on organic light-emitting diodes. Chem. Soc. Rev.49, 1331–1343 (2020). - PubMed

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Perovskite spin light-emitting diodes with simultaneously high electroluminescence dissymmetry and high external quantum efficiency

Affiliations

Perovskite spin light-emitting diodes with simultaneously high electroluminescence dissymmetry and high external quantum efficiency

Authors

Affiliations

Abstract

Conflict of interest statement

Figures

References

LinkOut - more resources

Full Text Sources