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. 2025 May 22;15(1):17753.
doi: 10.1038/s41598-025-02352-w.

Topological edge state resonance as gamma dosimeter using poly nanocomposite in symmetrical periodic structure

Affiliations

Topological edge state resonance as gamma dosimeter using poly nanocomposite in symmetrical periodic structure

Zaky A Zaky et al. Sci Rep. .

Abstract

Topological edge state resonance based sensor, including photonic crystal, is proposed for gamma radiation detection. This article initiates by showing the fundamental principles of photonic crystal, topological edge state, and gamma dosimeter, highlighting their benefits and performance over conventional detectors. This study discusses the possibility of exciting a topological edge state resonance using two symmetrical photonic crystals composed of silicon doped with poly(ethylene oxide) nanocomposite as a gamma detector. The simulation results using the transfer matrix method recorded a sensitivity of 1.24 nm/Gy for gamma doses from 0 to 100 Gy and 0.34 nm/Gy for gamma doses from 100 to 200 Gy when the proposed structure is composed of silicon doped with poly(ethylene oxide) nanocomposite as an active material. It is found that the maximum figure of merit and quality factor of the detector are [Formula: see text] [Formula: see text] and [Formula: see text], respectively. Thus, this innovative topological edge state resonance-based detector is extremely promising for radiation detection. According to these investigations, topological edge state gamma sensors have distinct advantages over traditional dosimeters in terms of increased sensitivity, robustness against disorder, and simplified structure, which makes them appropriate for use in environmental radiation monitoring and medical imaging.

Keywords: Dosimeter; Gamma radiation; Periodic structure; Polymer nanocomposite; Topological edge state.

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Conflict of interest statement

Declarations. Competing interests: The authors declare no competing interests.

Figures

Fig. 1
Fig. 1
Schematic design of symmetrical PhCs composed of silicon doped with PEONC.
Fig. 2
Fig. 2
(A) Measured and our fitted RIs of PEONC, and (B) RIs of PSi (formula image) doped with PEONC at different gamma doses from 0 to 200 Gy.
Fig. 3
Fig. 3
Transmittance of (A) PhC1 (black line) and symmetrical structure of PhC1* PhC2 (red line) in the absence of gamma dose, and (B) Transmittance of symmetrical structure of PhC1* PhC2 at different gamma doses.
Fig. 4
Fig. 4
Transmittance of symmetrical structure of PhC1* PhC2 at porosity of formula image formula image, 16%, 18%, 20%, and 22% at different gamma doses (0 Gy in black spectrum, 100 Gy in red spectrum, and 200 Gy in blue spectrum).
Fig. 5
Fig. 5
(A) FWHM and transmittance at 0 Gy, (B) FoM and sensitivity, and (C) LoD and Q of the symmetrical structure of PhC1* PhC2 versus P of PSi layers.
Fig. 6
Fig. 6
Transmittance of the symmetrical structure of PhC1*PhC2 versus N at 0 Gy gamma dose.
Fig. 7
Fig. 7
(A) FWHM and transmittance at 0 Gy, (B) FoM and sensitivity, and (C) LoD and Q of the symmetrical structure of PhC1* PhC2 versus N.
Fig. 8
Fig. 8
Transmittance of the outstanding peak versus N at (A) 100 Gy and (B) 200 Gy gamma dose.
Fig. 9
Fig. 9
Transmittance of the outstanding peaks at 0 Gy, 100 Gy and 200 Gy gamma dose.

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