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. 2025 Aug 11;64(33):e202507914.
doi: 10.1002/anie.202507914. Epub 2025 Jun 18.

Buried Interface Modification Strategy for Efficient Tin-Based Perovskite Light-Emitting Diodes

Zheng Jiang #  1 , Jie Yang #  2 , Wenbin Wang  1 , Yangyu Liu  3 , Yuhan Zhou  3 , Jing Xu  3 , Wang Wang  2 , Hongyao Ding  1 , Ya Zhong  1 , Haifeng Zhao  4   5 , Sai Bai  4 , Weidong Xu  6 , Wing Chung Tsoi  7 , Tao Yu  3 , Chunxiong Bao  3 , Xiaodong Shen  1 , Pengpeng Teng  1   8
Affiliations

Buried Interface Modification Strategy for Efficient Tin-Based Perovskite Light-Emitting Diodes

Zheng Jiang et al. Angew Chem Int Ed Engl. .

Abstract

Tin (Sn)-based perovskites show great potential for environmentally friendly and high-performance light-emitting diodes (LEDs). However, the development of Sn-based perovskite LEDs (PeLEDs) lags significantly behind that of lead-based perovskites. This is mainly due to the faster crystallization rate of Sn-based perovskites that leads to a higher defect density in Sn-based perovskite films, thereby serious nonradiative recombination. Here, we demonstrated a buried interface modification (BIM) strategy to regulate the crystallization kinetics of Sn-based perovskite films by using carboxylate as multifunctional surface modifiers. We reveal that the buried interface is critical to improve the nucleation and crystallization of Sn-based perovskite films. As a result, efficient near-infrared Sn-based PeLEDs were achieved with an external quantum efficiency (EQE) of 11.9%. This work suggests an efficient and elegant route to obtain high-performance Sn-based perovskite films and devices.

Keywords: Buried interface; Crystallization; Light‐emitting diodes; Modification; Tin‐based perovskites.

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