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. 2025 Nov:225:111939.
doi: 10.1016/j.apradiso.2025.111939. Epub 2025 Jun 3.

Nuclear reaction transmutation doping in GaN-HEMT MOSFETs

Rijin N T  1 , Dinesh Kumar  2 , M M Musthafa  3 , Midhun C V  3 , Vafiya T  3 , Swapna Balakrishnan  3 , S Ghugre  4 , S Dasgupta  5 , J Datta  5
Affiliations

Nuclear reaction transmutation doping in GaN-HEMT MOSFETs

Rijin N T et al. Appl Radiat Isot. 2025 Nov.

Abstract

Alpha-induced doping of GaN-High Electron Mobility Transistor (HEMT) was performed employing 45 MeV-α beam. The population of n-type and p-type dopants was identified and quantified by analysing the induced activities of the contributing nuclear reactions. The population was reproduced theoretically, using TALYS -1.96 nuclear reaction model, and the population of non-radioactive dopants was also estimated using the same model. The analysis shows a significant population of Ge and As isotopes, leading to intense n-type doping in the GaN-HEMT semiconductor.

Keywords: Cross-section; GaN; Integral yield; Radiation induced effects; TALYS-1.96 code.

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Conflict of interest statement

Declaration of competing interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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