Effect of electroplating factory effluent on the germination and growth of hyacinth bean and mustard
- PMID: 4065075
- DOI: 10.1016/0013-9351(85)90089-1
Effect of electroplating factory effluent on the germination and growth of hyacinth bean and mustard
Abstract
The effect of electroplating factory effluent in different concentrations (viz., 0.1, 0.2, 0.4, 0.6, 0.8, 1.0, 1.5, 2.0, 2.5, 3.0, and 4.0%) on the germination and growth of hyacinth beans (Dolichos lablab) and mustard seeds (Brassica compestris) was studied. The germination of seeds was delayed with the increase of effluent concentration and the germination of mustard seeds was totally inhibited at 1.5% effluent concentration while hyacinth bean seeds tolerated the effluent up to 2.5% concentration. The metal content in the hyacinth bean plants increased with increasing effluent concentration but after 1.0% effluent concentration, the concentration of all the metals (Ca, Mg, Na, K, Cu, Zn, Fe) decreased in the plants except Cr, which increased throughout. Percentage germination, fresh weight, dry weight, root length, and shoot length of the plants were also analyzed. Cd, Ni, Co, Mn, and Pb were not detectable in the hyacinth bean plants.
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