Recent Advances in Porous Low- k Materials for Integrated Circuits

Abstract

Developing porous low-dielectric (low-k) materials is one of the methods to achieve high-performance integrated circuits (ICs), which is critical for reducing signal delay and power consumption. This review focuses on the classification, synthesis, and application of these materials, with a spotlight on recent advances in polyimide (PI) and silica-based variants. The PI materials are characterized based on the specific preparation methods employed, while the silica-based materials are classified according to their organic and inorganic properties. Additionally, an investigation is conducted on various porous low-k materials. These materials are engineered to achieve a balance between low dielectric constants and retained mechanical integrity, which is essential for advanced IC performance. The review highlights the challenges in material synthesis and integration, emphasizing the need for scalable and reliable solutions. Through a qualitative analysis of the literature, this review compares properties and fabrication techniques, exploring both traditional and emerging materials. The summary of recent advancements and the identification of gaps in understanding aim to guide future research and experimental development, ensuring the continued progress of microelectronic devices.

Keywords: integrated circuit interconnects; low-k materials; organosilica films; polyimide; porous materials; thermal−mechanical stability.