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. 2025 Jul 22;10(30):33636-33644.
doi: 10.1021/acsomega.5c04495. eCollection 2025 Aug 5.

Silicon and Silver Low-Energy Ion Implantation into Titanium Plates for Improved Biocompatibility

Estela K Kerstner Baldin  1   2 , Melissa Machado Rodrigues  1 , Cristian Padilha Fontoura  1 , Rafaele Frassini  3 , Ana Elisa Dotta Maddalozzo  1 , Jennifer Stefani Weber  1 , Amanda Bohn  4 , Klester Dos Santos Souza  4 , Célia de Fraga Malfatti  2 , Mariana Roesch-Ely  3 , Carlos Alejandro Figueroa  1 , Cesar Aguzzoli  1
Affiliations

Silicon and Silver Low-Energy Ion Implantation into Titanium Plates for Improved Biocompatibility

Estela K Kerstner Baldin et al. ACS Omega. .

Abstract

Surface modification of implant materials continues to address the issue of osseointegration. Moreover, combining osseointegration with bactericidal or antifouling properties in implants remains an open question for debate. Over the years, silver has been widely used as an agent for killing and preventing bacterial proliferation. Silicon, on the other hand, has been linked to improved osteogenic activity. In this work, titanium plates were incorporated with both Ag and Si ions through low-energy ion implantation, and surface characterization was carried out to validate the process. Ti plates containing 43 μg cm-2 Ag were further enriched with small amounts of Si, as verified by glow discharge optical emission spectroscopy (GD-OES) and energy-dispersive X-ray spectroscopy (EDS). This added step increased surface roughness by approximately 11% and led to a statistically significant difference in wettability, rendering hydrophilic features (from angles around 90° to below 70° for the Ag + Si condition)both of which influence biocompatibility. Electrochemical tests showed a more reactive surface for implanted samples but nonetheless demonstrated stability over 28 days. Further research should focus on increasing the Si doping in Ti and evaluating subsequent in vitro conditions.

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Figures

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Monte Carlo simulations showing the in-depth silver and silicon concentration profiles inside titanium for implantation energies of 2 and 4 keV, respectively.
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RBS spectra for 2 keV (a) and 4 keV (b) Ag ion implantation.
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In-depth GDOES curves displaying two peaks near the surface corresponding to Si (4 keV) and Ag (2 keV) in TiAgSi (a) Ag and Si concentration maps for TiAg (b) and Ag and Si concentration maps for TiAgSi.
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SEM micrographs for the different substrates and 3D AFM maps.
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Schematic of Si and Ag implantation showing depth distribution.
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Contact angle measurements for Ti and TiAgSi samples.
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ICP-OES results showing Ag (a) and Si (b) migration into SBF over time.
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Open potential curves for Ti, TiAg, and TiAgSi over the period of 28 days (a) and 2 h (b).
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Tafel polarization curves of Ti, TiAg, and TiAgSi.
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Cell viability results obtained through the indirect MTT test.
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SEM analysis of samples in direct contact with MG63 cells.
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Cell analysis based on SEM images.
See this image and copyright information in PMC

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