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. 2025 Nov;12(41):e09281.
doi: 10.1002/advs.202509281. Epub 2025 Aug 13.

Suppressing the Electron-Phonon Coupling in 2D Perovskite Cs3Sb2I9 for Lead-Free Indoor Photovoltaics

Affiliations

Suppressing the Electron-Phonon Coupling in 2D Perovskite Cs3Sb2I9 for Lead-Free Indoor Photovoltaics

Yixin Guo et al. Adv Sci (Weinh). 2025 Nov.

Abstract

Antimony-based perovskite-inspired materials (Sb-PIMs) are promising lead-free candidates for indoor photovoltaic application. Cs3Sb2I9, in particular, with a ≈2.0 eV bandgap, is ideal for harvesting indoor white light. However, solution-processed Sb-PIMs preferentially crystallize into thermodynamically stable 0D structures, leading to strong self-trapped exciton (STE) formation, limiting device performance. Although chloride (Cl) doping can induce 2D structural transitions, it enhances Fröhlich electron-phonon coupling (EPC), creating an intrinsic trade-off. Here, we develop an anion-exchange strategy to fabricate phase-pure, Cl-free 2D Cs3Sb2I9 films that suppress STE formation while enabling controlled dimensional reconstruction. This approach yields a reduced Huang-Rhys factor (from 30.7 to 21.5) and prolonged STE lifetime (8.60 to 9.19 ps). Density functional theory (DFT) calculations reveal a significant reduction in excited-state octahedral distortion (Δd = 0.898 × 10-3 for Cs3Sb2I9 vs. 5.752 × 10-3 for Cs3Sb2I6Cl3), confirming intrinsically weaker EPC in Cl-free structures. The device achieves a power conversion efficiency (PCE) of 3.40% under AM 1.5G solar illumination and an 8.2% PCE under 1000 lux white LED conditions. alongside Long-term stability measurement confirms its environmental robustness. These results represent the highest indoor performance reported to date for Sb-based perovskite-inspired solar cells.

Keywords: 2D C3Sb2I9; Pb‐free; electron–phonon coupling; indoor photovoltaic.

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Conflict of interest statement

The authors declare no conflict of interest.

Figures

Figure 1
Figure 1
a) Crystal structures of typical 0D and 2D Sb‐based perovskite‐inspired materials. b) Raman spectra of MA3Sb2I9‐xClx, Cs3Sb2I9‐xClx, and MA‐Cs3Sb2I9‐xClx films annealed at 100 °C. c) Raman spectra of Cs3Sb2I9‐xClx, and MA‐Cs3Sb2I9‐xClx films annealed at 240 °C. d) Absorption spectra and optical images of MA3Sb2I9‐xClx, Cs3Sb2I9‐xClx, and MA‐Cs3Sb2I9‐xClx films annealed at 100 °C. e) Absorption spectra and optical images of Cs3Sb2I9‐xClx, and MA‐Cs3Sb2I9‐xClx films annealed at 240 °C, along with MA3Sb2I9‐xClx film annealed at 100 °C.
Figure 2
Figure 2
a) XRD patterns of MA3Sb2I9‐xClx, Cs3Sb2I9‐xClx and MA‐Cs3Sb2I9‐xClx annealed at 100 and 240 °C. b,c) GIWAX patterns of (b) Cs3Sb2I9‐xClx and (c) MA‐Cs3Sb2I9‐xClx films annealed at 240 °C. d–g) SEM images of Cs3Sb2I9‐xClx and MA‐Cs3Sb2I9‐xClx films treated with anti‐solvent and annealed at (d,e) 100 °C or (f,g) 240 °C. h,i) SEM images of Cs3Sb2I9‐xClx and MA‐Cs3Sb2I9‐xClx films annealed at 240 °C without anti‐solvent treatment.
Figure 3
Figure 3
a) Room temperature PL spectra of 2D‐MA3Sb2I9‐xClx, 2D‐Cs3Sb2I9‐xClx, and 2D‐Cs3Sb2I9 films. b‐d) Gaussian deconvolution of PL spectra for (b) 2D‐Cs3Sb2I9‐xClx, (c) 2D‐Cs3Sb2I9, and (d) 2D‐MA3Sb2I9‐xClx films. e,f) Temperature‐dependent PL spectra of (e) 2D‐Cs3Sb2I9‐xClx and (f) 2D‐Cs3Sb2I9 films. g,h) FWHM as a function of temperature extracted from (g) 2D‐Cs3Sb2I9‐xClx and (h) 2D‐Cs3Sb2I9 films. i,j) TA spectra at different time delays for (i) Cs3Sb2I9‐xClx and (j) 2D‐Cs3Sb2I9 films. k,l) TA decays of (k) glass/2D‐Cs3Sb2I9‐xClx and (l) glass/2D‐Cs3Sb2I9 films probed at 600 nm.
Figure 4
Figure 4
a) Charge density plots of the VBM and CBM for 2D‐Cs3Sb2I9. b,c) PDOS for (b) 2D‐Cs3Sb2I9 and (c) 2D‐Cs3Sb2I6Cl3. d,e) Ground‐state optimized structures from DFT calculations for (d) 2D‐Cs3Sb2I9 and (e) 2D‐Cs3Sb2I6Cl3. f,g) Relaxed excited‐state geometries for (f) 2D‐Cs3Sb2I9 and (g) 2D‐Cs3Sb2I6Cl3.
Figure 5
Figure 5
Device configuration and photovoltaic performance of Sb‐based perovskite‐inspired solar cells. a) Schematic of the planar architecture: FTO/Nb2O5/PIMs/P3HT (or F4TCNQ:P3HT)/Carbon. b) Energy level alignment of each functional layer. c) J–V curves of 2D‐MA3Sb2I9‐xClx, 2D‐Cs3Sb2I9‐xClx, and 2D‐Cs3Sb2I9 devices under AM1.5G. d) Efficiency statistics of corresponding devices. e) J–V curves of 2D‐Cs3Sb2I9 devices with pristine or F4TCNQ‐doped P3HT HTL. f) Efficiency distributions with and without F4TCNQ doping. g) Comparison of AM1.5G and WLED spectra. h) J–V curve of 2D‐Cs3Sb2I9 device under 1000 lux WLED. i) Indoor PCE statistics under WLED. j) PCE comparison with reported Sb/Bi‐based perovskite‐inspired indoor photovoltaics.

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