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. 2025 Aug 13;15(1):29724.
doi: 10.1038/s41598-025-99575-8.

Current matched all perovskite tandem solar cells with low lead perovskites achieving 31.9% efficiency and enhanced stability

Affiliations

Current matched all perovskite tandem solar cells with low lead perovskites achieving 31.9% efficiency and enhanced stability

Navdeep Kaur et al. Sci Rep. .

Abstract

Multilayer tandem solar cells emerge as a transformative solution, leveraging multiple absorber layers with optimized bandgaps to capture and convert a broader spectrum of sunlight. This layered architecture overcomes the efficiency limitations of single-junction solar cells by minimizing transparency and thermalization losses while maximizing photon utilization across the solar spectrum. Although hybrid perovskites have demonstrated exceptional photovoltaic performance, their dependence on organic components often results in stability challenges under varying environmental conditions. To mitigate this issue, all-inorganic perovskites have emerged as a robust alternative, offering enhanced thermal and moisture stability along with reliable long-term performance. In the proposed design, a sustainable approach is adopted using a tin-based, low-lead, all-inorganic CsPb0.75Sn0.25IBr2 (1.78 eV) for the top subcell absorber, paired with a lead-free double perovskite Cs2TiI6 (1.02 eV), in the bottom subcell, with the use of SCAPS - 1D simulator. Standalone analyses of the top and bottom subcells are conducted before tandem configuration implementation. Importantly, tandem design is optimized by investigating the current matching point by varying the absorber layer thicknesses (100-1000 nm). Illuminating the top subcell with the AM 1.5G spectrum and passing filtered light to the bottom subcell enables extensive light absorption and improved overall PCE. With a common current point at 16.83 mA/cm2 the tandem design attains a peak PCE of 31.93%, accompanied by a fill factor (FF) of 86.84% and an open-circuit voltage (VOC) of 2.18 V. These findings highlight the potential of this optimized tandem solar cell design to deliver high efficiency with enhanced stability, offering a promising pathway for sustainable and scalable photovoltaic technologies.

Keywords: Double perovskite; Low - lead all inorganic perovskite; SCAPS−1D; Tandem solar cell.

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Conflict of interest statement

Declarations. Competing interests: The authors declare no competing interests. Consent to participate: We comply with the ethical standards. We provide our consent to take part. Consent for publication: All the authors are giving consent to publish.

Figures

Fig. 1
Fig. 1
Device structure of (a) standalone CsPb0.75Sn0.25IBr2 absorber-based top cell (b) standalone Cs2TiI6 absorber-based bottom cell (c) CsPb0.75Sn0.25IBr2/Cs2TiI6 based MTSC.
Fig. 2
Fig. 2
Absorption profiles for (a) CsPb0.75Sn0.25IBr2 top sub cell absorber (b) Cs2TiI6 bottom sub cell absorber.
Fig. 3
Fig. 3
Standalone top subcell (front electrode/N-PDI/CsPb0.75Sn0.25IBr2/Spiro-OMeTAD/back electrode, ) (a) JV plot (b) EQE plot, bottom subcell (front electrode/TiO2/Cs2TiI6/PEDOT/back electrode) (c) JV plot (d) EQE plot.
Fig. 4
Fig. 4
Standalone top subcell (a) Energy band diagram (eV) (b) Carrier density (1/cm3) (c) Current density (mA/cm2), under biased voltage (VOC).
Fig. 5
Fig. 5
Standalone top subcell (a) Energy band diagram (eV) (b) Carrier density (1/cm3) (c) Current density (mA/cm2), under unbiased condition (0 V).
Fig. 6
Fig. 6
Standalone bottom subcell (a) Energy band diagram (eV) (b) Carrier density (1/cm− 3) (c) Current density (mA/cm2), under biased voltage (VOC).
Fig. 7
Fig. 7
Standalone bottom subcell (a) Energy band diagram (eV) (b) Carrier density (1/cm3) (c) Current density (mA/cm2), under unbiased condition (0 V ).
Fig. 8
Fig. 8
Standalone top subcell on ETL thickness variation (50–250 nm) (a) IV curve (b) PV parameters, HTL thickness variation (c) IV curve (d) PV parameters.
Fig. 9
Fig. 9
Standalone bottom subcell on ETL thickness variation (a) IV curve (b) PV parameters, HTL thickness variation (c) IV curve (d) PV parameters.
Fig. 10
Fig. 10
Impact of interface defects (1010 cm− 2 to 1018 cm− 2) on the performance of the top subcell (a) IV curve and (b) PV parameters for N-PDI/CsPb0.75 Sn0.25IBr2 (ETL/absorber layer) interface (c) IV curve and (d) PV parameters for CsPb0.75 Sn0.25IBr2/Spiro-OMeTAD (absorber layer/HTL) interface.
Fig. 11
Fig. 11
Impact of interface defects ((1010 cm− 2 to 1013cm−2) on the performance of the bottom subcell (a) IV curve and (b) PV parameters for TiO2/Cs2TiI6 ( ETL/absorber layer) interface (c) IV curve and (d) PV parameters for Cs2TiI6/PEDOT (absorber layer/HTL) interface.
Fig. 12
Fig. 12
Effect of thickness variation (100–1000 nm) on PV parameters for (a) the top subcell absorber layer, CsPb0.75Sn0.25IBr2, and (b) the bottom subcell absorber layer, Cs2TiI6.
Fig. 13
Fig. 13
(a) The standard light spectrum AM 1.5 G (b) The filtered light spectrum at CsPb0.75Sn0.25IBr2 thickness variation (100–1000 nm).
Fig. 14
Fig. 14
JSC (short circuit current density) plot at 100–1000 nm thickness variation of CsPb0.75Sn0.25IBr2 (top cell absorber) and Cs2TiI6 (bottom cell absorber), illustrating the evaluation of the current matching point.
Fig. 15
Fig. 15
Obtained PV parameters (a) VOC (b) FF (c) JSC (d) PCE, representing the cumulative impact of top and bottom cell thickness variation (100–1000 nm ), under filtered spectrum.
Fig. 16
Fig. 16
JV plots in regards to (a) standalone top/bottom subcell (under AM 1.5 G spectrum) (b) MTSC CsPb0.75Sn0.25IBr2/Cs2Ti6 under filtered spectrum.

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