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. 2025 Sep 10;20(1):157.
doi: 10.1186/s11671-025-04340-5.

Alkali chalcogenides-assisted vapor-liquid-solid growth of WX2 (X = S, Se, Te)

Affiliations

Alkali chalcogenides-assisted vapor-liquid-solid growth of WX2 (X = S, Se, Te)

Yi-Cheng Chiang et al. Discov Nano. .

Abstract

Promoter-assisted chemical vapor deposition (CVD) has emerged as a robust strategy for the low-temperature synthesis of diverse transition metal dichalcogenides (TMDs). In these processes, promoter-induced intermediates facilitate specific reaction pathways, enabling controlled growth via vapor-solid-solid (VSS) or vapor-liquid-solid (VLS) modes. While previous studies have primarily focused on transition metal precursors, growth pathways involving engineered chalcogen-based intermediates remain underexplored due to their volatility and low melting points. Here, we demonstrate a stabilized chalcogen strategy that enables the scalable growth of highly crystalline tungsten-based (W-) TMDs through the formation of alkali-chalcogen mixtures within the VLS regime. Atomically resolved scanning tunneling microscopy (STM) of transferred WTe2 confirms ultraclean surfaces, attributed to the salt-like alkali-chalcogen interfacial layer that enables support-free film delamination. This work demonstrates a versatile route toward the scalable synthesis and clean manipulation of high-quality TMD.

Keywords: Alkali chalcogenides; Promoter-assisted CVD; STM; Transition metal dichalcogenides; Ultraclean manipulation; WTe2.

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Conflict of interest statement

Declarations. Ethics approval and consent to participate: Not applicable. Consent for publication: Not applicable. Competing interests: The authors declare no competing interests.

Figures

Fig. 1
Fig. 1
Alkali-Chalcogen-assisted growth. a Schematic illustration of the two representative growth regimes in CVD of the W-based TMD (WX2). b Raman spectra of the synthetic WX2 (X = S, Se, and Te)
Fig. 2
Fig. 2
Verification of the interfacial alkali chalcogens. a Optical microscopy images of the two-step growth process, showing the formation of a salt-like K2Seₐ intermediate layer during Step 1, prior to the introduction of tungsten precursors. In Step 2, the WSe2 emerges upon the supply of W-based reactants. b SEM image of the WSe2 film after PDMS-assisted delamination, revealing a well-defined boundary between the remaining WSe2 and the exposed SiO2 substrate, serving as a contrast to highlight the interfacial region. c AES spectra acquired from the red (substrate) and blue (WSe2) regions marked in (b), showing clear compositional differences between the two areas
Fig. 3
Fig. 3
Water-assisted transfer of the as-grown films. Schematic illustration, AFM images and height of (a) the as-grown and b the transferred TMDs. c XPS spectra of Na 1s and Cl 2p core levels for NaCl-assisted WX2 films before and after the transfer. d XPS spectra of K 2p and Cl 2p core levels for KCl-assisted WX2 films before and after the transfer
Fig. 4
Fig. 4
Atomically resolved STM imaging of the synthetic WTe2. a Constant-current scanning tunneling microscopy (STM) image of a transferred WTe2 film on highly ordered pyrolytic graphite (HOPG), showing a well-ordered atomic lattice. b Corresponding fast Fourier transform (FFT) image, with purple circles highlighting the characteristic Bragg diffraction vectors

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