Alkali chalcogenides-assisted vapor-liquid-solid growth of WX2 (X = S, Se, Te)
- PMID: 40928550
- PMCID: PMC12423382
- DOI: 10.1186/s11671-025-04340-5
Alkali chalcogenides-assisted vapor-liquid-solid growth of WX2 (X = S, Se, Te)
Abstract
Promoter-assisted chemical vapor deposition (CVD) has emerged as a robust strategy for the low-temperature synthesis of diverse transition metal dichalcogenides (TMDs). In these processes, promoter-induced intermediates facilitate specific reaction pathways, enabling controlled growth via vapor-solid-solid (VSS) or vapor-liquid-solid (VLS) modes. While previous studies have primarily focused on transition metal precursors, growth pathways involving engineered chalcogen-based intermediates remain underexplored due to their volatility and low melting points. Here, we demonstrate a stabilized chalcogen strategy that enables the scalable growth of highly crystalline tungsten-based (W-) TMDs through the formation of alkali-chalcogen mixtures within the VLS regime. Atomically resolved scanning tunneling microscopy (STM) of transferred WTe2 confirms ultraclean surfaces, attributed to the salt-like alkali-chalcogen interfacial layer that enables support-free film delamination. This work demonstrates a versatile route toward the scalable synthesis and clean manipulation of high-quality TMD.
Keywords: Alkali chalcogenides; Promoter-assisted CVD; STM; Transition metal dichalcogenides; Ultraclean manipulation; WTe2.
© 2025. The Author(s).
Conflict of interest statement
Declarations. Ethics approval and consent to participate: Not applicable. Consent for publication: Not applicable. Competing interests: The authors declare no competing interests.
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