Optically addressed liquid crystal light valve utilizing GaN as both photoconductive and conductive layers

Abstract

High laser damage threshold spatial light modulators are in urgent demand in high-power laser fields. This study employs GaN's high laser damage threshold, broad transmission, and dual electrical/photoconductive properties to create durable optically addressed liquid crystal spatial light modulators. Using Mg-doped and Si-doped GaN as transparent electrodes and photoconductive layers, the on-off ratio of GaN-GaN OASLM can reach 662.3:1, with a resolution of 70.15 µm, a transmittance greater than 70%, the aperture of Si-doped GaN-GaN OASLM is 20mm×15mm, and that of Mg-doped GaN-GaN OASLM is 25mm×20mm. These results highlight the feasibility of GaN OASLM in high-power laser systems and are expected to solve the urgent demand for high damage threshold and large aperture spatial light modulators in laser applications.