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. 1997 Apr 11;276(5310):238-40.
doi: 10.1126/science.276.5310.238.

Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

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Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

S Mathews et al. Science. .

Abstract

Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. Doped rare-earth manganates, which are usually associated with colossal magnetoresistive properties, have been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be "tuned" by varying the manganate stochiometry. A device with La0.7Ca0.3MnO3 as the semiconductor and PbZr0.2Ti0.8O3 as the ferroelectric gate exhibited a modulation in channel conductance of at least a factor of 3 and a retention loss of 3 percent after 45 minutes without power.

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